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RF2L24280CB4

Part Number	RF2L24280CB4
Manufacturer	STMicroelectronics
Description	RF Power LDMOS transistor
Published	Mar 19, 2023
Detailed Description	RF2L24280CB4 Datasheet 280 W, 28 V, 2.4 to 2.5 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Con...
Datasheet	RF2L24280CB4 PDF File

Overview

RF2L24280CB4 Datasheet 280 W, 28 V, 2.
4 to 2.
5 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency RF2L24280CB4 2450 MHz 28 V 280 W 13 dB 60% • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European directive 2002/95/EC Applications • Industrial, scientific and medical Description T...

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RF2L24280CB4 RF Power LDMOS transistor - STMicroelectronics

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