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BAV170

nexperia
Part Number BAV170
Manufacturer nexperia
Description Low-leakage double diode
Published May 3, 2023
Detailed Description BAV170 Low-leakage double diode 1 April 2023 Product data sheet 1. General description Epitaxial, medium-speed switchi...
Datasheet PDF File BAV170 PDF File

BAV170
BAV170

Overview
BAV170 Low-leakage double diode 1 April 2023 Product data sheet 1.
General description Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package.
The diodes are in common cathode configuration.
2.
Features and benefits • Plastic SMD package • Low leakage current: typ.
3 pA • Switching time: typ.
0.
8 us • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
85 V • Repetitive peak forward current: max.
500 mA.
3.
Applications • Low-leakage current applications in surface mounted circuits.
4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Per diode VR reverse voltage IR reverse current Conditions Tj = 25 °C VR = 75 V; pulsed; Tj = 25 °C Min Typ Max Unit - - 75 V - 0.
003 5 nA 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 A1 anode (diode 1) 2 A2 anode (diode 2) 3 CC common cathode Simplified outline 3 Graphic symbol CC 1 2 SOT23 A1 A2 aaa-032141 Nexperia BAV170 Low-leakage double diode 6.
Ordering information Table 3.
Ordering information Type number Package Name BAV170 SOT23 Description plastic, surface-mounted package; 3 terminals; 1.
9 mm pitch; 2.
9 mm x 1.
3 mm x 1 mm body Version SOT23 7.
Marking Table 4.
Marking codes Type number BAV170 [1] % = placeholder for manufacturing site code Marking code[1] JX% 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Per diode VR reverse voltage Tj = 25 °C - VRRM repetitive peak reverse - voltage IF forward current single diode loaded; Tamb = 25 °C [1] - double diode loaded; Tamb = 25 °C [1] - IFRM repetitive peak forward Tj = 25 °C - current IFSM Ptot Tj Tamb Tstg non-repetitive peak tp = 1 µs; square wave; Tj(init) = 25 °C - forward current tp = 1 ms; square wave; Tj(init) = 25 °C - tp = 1 s; square wave; Tj(init) = 25 °C - total power dissipati...


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