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DMT10H010LSSQ

DIODES
Part Number DMT10H010LSSQ
Manufacturer DIODES
Description 100V N-CHANNEL MOSFET
Published May 10, 2023
Detailed Description DMT10H010LSSQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V 12mΩ @ ...
Datasheet PDF File DMT10H010LSSQ PDF File

DMT10H010LSSQ
DMT10H010LSSQ

Overview
DMT10H010LSSQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.
5mΩ @ VGS = 10V 12mΩ @ VGS = 6V 14.
5mΩ @ VGS = 4.
5V ID Max TA = +25°C 12A 11A 10A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.
It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Backlighting  Power management functions  DC-DC converters SO-8 S Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  T...


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