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IRFIZ44NPbF

Infineon
Part Number IRFIZ44NPbF
Manufacturer Infineon
Description Power MOSFET
Published May 24, 2023
Detailed Description  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4...
Datasheet PDF File IRFIZ44NPbF PDF File

IRFIZ44NPbF
IRFIZ44NPbF

Overview
 Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.
5KVRMS   Sink to Lead Creepage Dist.
= 4.
8mm  Fully Avalanche Rated  Lead-Free IRFIZ44NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.
024 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Full Pak eliminates the need for additional insulating h...


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