• BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
• High-Impedance State During Power Up
and Power Down
• Open-Collector Outputs Drive Bus L...
SN64BCT757 PDF File
