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E3M0120090J

Cree
Part Number E3M0120090J
Manufacturer Cree
Description Silicon Carbide Power MOSFET
Published Jun 25, 2023
Detailed Description E3M0120090J Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generat...
Datasheet PDF File E3M0120090J PDF File

E3M0120090J
E3M0120090J

Overview
E3M0120090J Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source • Automotive qualified (AEC-Q101) and PPAP capable Benefits • Reduce switching losses and minimize gate ringing • High system efficiency • Increased power density • Increased system switching frequency Applications • EV charging • DC/DC converters • SMPS • UPS • Solar PV inverters Package Drain (TAB) Gate (Pin 1) Drive...


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