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VBT3045CBP-E3

Vishay
Part Number VBT3045CBP-E3
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Jun 26, 2023
Detailed Description www.vishay.com VBT3045CBP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypa...
Datasheet PDF File VBT3045CBP-E3 PDF File

VBT3045CBP-E3
VBT3045CBP-E3

Overview
www.
vishay.
com VBT3045CBP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
30 V at IF = 5.
0 A TMBS ® TO-263AB K 2 1 VBT3045CBP PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max.
in solar bypass mode application • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY ...


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