• 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ – IDS(MAX) = 6.5 A
• Reverse current capability • Zero reverse recovery loss • UVLO protection on low-...
MASTERGAN4 PDF File
