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STW52N60DM6

STMicroelectronics
Part Number STW52N60DM6
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Jun 26, 2023
Detailed Description STW52N60DM6 Datasheet N‑channel 600 V, 64 mΩ typ., 45 A MDmesh DM6 Power MOSFET in a TO‑247 package 3 2 1 TO-247 D(2, T...
Datasheet PDF File STW52N60DM6 PDF File

STW52N60DM6
STW52N60DM6

Overview
STW52N60DM6 Datasheet N‑channel 600 V, 64 mΩ typ.
, 45 A MDmesh DM6 Power MOSFET in a TO‑247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max.
ID STW52N60DM6 600 V 74 mΩ 45 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Product status link STW52N60DM6 Product summary Order code STW52N60DM6 Marking 52N60DM6 Package TO-247 Packing Tube DS13632 - Rev 1 - February 2021 For further information contact your local STMicroelectronics sales office.
www.
st.
com STW52N60DM6 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope di/dt(2) Peak diode recovery current slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
Pulse width limited by safe operating area.
2.
ISD ≤ 45 A, VDS (peak) < V(BR)DSS, VDD = 400 V.
3.
VDS ≤ 480 V.
Symbol RthJC RthJA Table 2.
Thermal data Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient Symbol IAR EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or not repeti...


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