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SCTW35N65G2V

STMicroelectronics
Part Number SCTW35N65G2V
Manufacturer STMicroelectronics
Description Silicon carbide Power MOSFET
Published Jun 26, 2023
Detailed Description SCTW35N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package HiP247 3 2 1 D(2, TA...
Datasheet PDF File SCTW35N65G2V PDF File

SCTW35N65G2V
SCTW35N65G2V

Overview
SCTW35N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 55 mΩ typ.
, 45 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order code VDS RDS(on) max.
ID SCTW35N65G2V 650 V 67 mΩ 45 A • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200°C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
The device features remarkably low on-resistance per unit area and very...


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