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ADP61075W3

STMicroelectronics
Part Number ADP61075W3
Manufacturer STMicroelectronics
Description SiC MOSFET
Published Jun 26, 2023
Detailed Description ADP61075W3 ADP86012W2 Datasheet Automotive-grade ACEPACK DRIVE power moduDlaeta,ssheixept ack topology 750 V, 1.2 mΩ ...
Datasheet PDF File ADP61075W3 PDF File

ADP61075W3
ADP61075W3


Overview
ADP61075W3 ADP86012W2 Datasheet Automotive-grade ACEPACK DRIVE power moduDlaeta,ssheixept ack topology 750 V, 1.
2 mΩ typ.
SiC MOSFET gen.
3 based Automotive-grade ACEPACK DRIVE power module, six pack topology 1200 V, 3.
5 mΩ typ.
SiC MOSFET gen.
2 based Features Features AACCEEPPAACCKKDDRRIVIEVE ACEPACK DRIVE • AQG 324 qualified • • D12•e0s0igVne7bd5lof0ockrVianugbtovlomocltoaktgiivneegapvpolilctaatgioens • 3.
•5 mΩ1o.
f2tympicΩaloRfDtSy(opni)cal RDS(on) • M•aximuMmaoxpiemrautimve ojupnectrioantitnegmpjuenractutiroenTJtoepm=p1e75ra°tCure TJ = 175 °C • Ve•ry lowVeswryitclhoiwngsewneitrcgyhing energy • Low inductive compact design for an higher power density • S•i3N4 ALMoBwsuinbdsturactetivtoeimcoprmovpeathcet rdmeasl pigenrfofromraanncehigher power density • S•iC PowSei3rNM4OSAFMEBT cshuipbssintrtaerteedttoo simubpsrtroavteefotrhiemrpmroavledpelifreftoimrme ance • 4.
•2 kV DSCiC1 Ps oinwsuelartiMonOSFET chip sintered to substrate for improved lifetime • D•irect c4o.
o2lekdVCuDbCas1e pslaitneswuitlhatpioinnfins • Three integrated NTC temperature sensors • Directly liquid cooled base plate with pin-fins Appl•icatiTohnree integrated NTC temperature sensors Product status link ADP86012W2 Product status link Product summary Order coAdDeP61075AWDP386012W2 Marking ADP86012W2 PacPkargoeduct suAmCEmPaArCyK DRIVE OrderLecaoddsetype MarkPinacgking ADPP6re1s0s 7fit5W3 ADP6T1ra0y75W3 • Traction main inverter Application Desc•riptMioanin inverter (electric traction) The ACEPACK DRIVE is a compact six pack module optimized for hybrid and electric vehicles traction inverter.
This power module features switches based on silicon Description carbide Power MOSFET 2nd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in synchronous rectification rweocrhkainrTvggehinmhegoiccdAyleeCc.
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