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STB8NM60T4

STMicroelectronics
Part Number STB8NM60T4
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Jun 26, 2023
Detailed Description STB8NM60T4 Datasheet N-channel 600 V, 0.9 Ω typ., 8 A MDmesh Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) ...
Datasheet PDF File STB8NM60T4 PDF File

STB8NM60T4
STB8NM60T4

Overview
STB8NM60T4 Datasheet N-channel 600 V, 0.
9 Ω typ.
, 8 A MDmesh Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS RDS(on) max.
ID STB8NM60T4 600 V 1.
0 Ω 8A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description G(1) S(3) AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.
This device offers extremely low onresistance, high dv/dt, and excellent avalanche characteristics.
Using STMicroelectronics's proprietary...


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