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STD1NK80ZT4

STMicroelectronics
Part Number STD1NK80ZT4
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Jun 26, 2023
Detailed Description STD1NK80ZT4 Datasheet N-channel 800 V, 13 Ω typ., 1 A SuperMESH Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) ...
Datasheet PDF File STD1NK80ZT4 PDF File

STD1NK80ZT4
STD1NK80ZT4

Overview
STD1NK80ZT4 Datasheet N-channel 800 V, 13 Ω typ.
, 1 A SuperMESH Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order codes VDS RDS(on) max.
ID STD1NK80ZT4 800 V 16 Ω 1 • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications AM01476v1_tab Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Product status link STD1NK80ZT4 Product summary Order code STD1NK80ZT4 Marking D1NK80Z Package DPAK Packing Tape and reel DS4318 - Rev 4 - March 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STD1NK80ZT4 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source human body model (R = 1.
5 kΩ, C = 100 pF) dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
Pulse width limited by safe operating area.
2.
ISD ≤ 1 A, di/dt ≤ 200 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA (1) Thermal resistance, junction-to-ambient 1.
When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol IAR EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.
) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V...


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