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CLS10F40

Toshiba
Part Number CLS10F40
Manufacturer Toshiba
Description Schottky Barrier Diode
Published Jul 19, 2023
Detailed Description Schottky Barrier Diode Silicon Epitaxial CLS10F40 1. Applications • Low-Voltage High-Speed Switching 2. Packaging and In...
Datasheet PDF File CLS10F40 PDF File

CLS10F40
CLS10F40

Overview
Schottky Barrier Diode Silicon Epitaxial CLS10F40 1.
Applications • Low-Voltage High-Speed Switching 2.
Packaging and Internal Circuit CLS10F40 1: Cathode 2: Anode CL2E 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit Reverse voltage VR 40 V Average rectified current IO (Note 1) 1.
0 A Non-repetitive peak forward surge current IFSM (Note 2) 10 A Junction temperature Tj 150 � Storage temperature Tstg -55 to 150 � Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in th...


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