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H11D1M

Part Number	H11D1M
Manufacturer	ON Semiconductor
Description	6-Pin DIP High Voltage Phototransistor Optocouplers
Published	Jul 22, 2023
Detailed Description	6-Pin DIP High Voltage Phototransistor Optocouplers 4N38M, H11D1M, H11D3M, MOC8204M Description The 4N38M, H11D1M, H11D3...
Datasheet	H11D1M PDF File

Overview

6-Pin DIP High Voltage Phototransistor Optocouplers 4N38M, H11D1M, H11D3M, MOC8204M Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators.
A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor.
The device is supplied in a standard plastic six−pin dual−in−line package.
Features • High Voltage: ♦ MOC8204M, BVCEO = 400 V ♦ H11D1M, BVCEO = 300 V ♦ H11D3M, BVCEO = 200 V • Safety and Regulatory Approvals: ♦ UL1577, 4,170 VACRMS for 1 Minute • DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage Applications • Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs • Appliance ...

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