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STG200G65FD8AG

Part Number	STG200G65FD8AG
Manufacturer	STMicroelectronics
Description	IGBT
Published	Sep 3, 2023
Detailed Description	STG200G65FD8AG Datasheet Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 p...
Datasheet	STG200G65FD8AG PDF File

Overview

STG200G65FD8AG Datasheet Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing C Features G E EGCD Product status link STG200G65FD8AG • AEC-Q101 qualified • Low-loss series IGBT • Low VCE(sat) = 1.
52 V (typ.
) at IC = 200 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C Applications • EV/HEV traction inverters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss...

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