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HP8KE6

ROHM

100V Nch+Nch Power MOSFET

HP8KE6 100V Nch+Nch Power MOSFET VDSS RDS(on)(Max.) ID PD 100V 54mΩ ±17A 21W lFeatures 1) Low on - resistance 2) Smal...



HP8KE6

ROHM


Octopart Stock #: O-1518343

Findchips Stock #: 1518343-F

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Description
HP8KE6 100V Nch+Nch Power MOSFET VDSS RDS(on)(Max.) ID PD 100V 54mΩ ±17A 21W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (HSOP8) 3) Pb-free plating ; RoHS compliant 4) Halogen Free lOutline HSOP8 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Quantity (pcs) Taping code Marking Embossed Tape 330 12 2500 TB1 HP8KE6 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Ta = 25°C VDSS ID*1 ID IDP*2 100 V ±17 A ±6.0 A ±24 A Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (total) VGSS IAS*3 EAS*3 PD*1 PD*4 ±20 V 6.0 A 2.9 mJ 21 W 3.0 Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 1/11 20230426 - Rev.002 HP8KE6 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Datasheet Symbol RthJC*1 RthJA*4 Values Unit Min. Typ. Max. - - 5.8 ℃/W - - 41.7 ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Breakdown voltage temperature coefficient Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Gate thresho...




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