DatasheetsPDF.com

HP8KE6

Part Number	HP8KE6
Manufacturer	ROHM
Description	100V Nch+Nch Power MOSFET
Published	Sep 11, 2023
Detailed Description	HP8KE6 100V Nch+Nch Power MOSFET VDSS RDS(on)(Max.) ID PD 100V 54mΩ ±17A 21W lFeatures 1) Low on - resistance 2) Smal...
Datasheet	HP8KE6 PDF File

Overview

HP8KE6 100V Nch+Nch Power MOSFET VDSS RDS(on)(Max.
) ID PD 100V 54mΩ ±17A 21W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (HSOP8) 3) Pb-free plating ; RoHS compliant 4) Halogen Free lOutline HSOP8 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Quantity (pcs) Taping code Marking Embossed Tape 330 12 2500 TB1 HP8KE6 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Ta = 25°C VDSS ID*1 ID IDP*2 100 V ±17 A ±6.
0 A ±24 A Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (total) VGSS IAS*3 EAS*3 PD*1 PD*4 ±20 V 6.
0 A 2.
9 mJ 21 W 3.
0 Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ www.
rohm.
com © 2023 ROHM Co.
, Ltd.
All rights reserved.
1/11 20230426 - Rev.
002 HP8KE6 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Datasheet Symbol RthJC*1 RthJA*4 Values Unit Min.
Typ.
Max.
- - 5.
8 ℃/W - - 41.
7 ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Breakdown voltage temperature coefficient Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Gate threshold voltage temperature coefficient Static drain - source on - state resistance Gate resistance Forward Transfer Admittance V(BR)DSS VGS = 0V, ID = 1mA ΔV(BR)DSS ID = 1mA ΔTj referenced to 25℃ IDSS VDS = 100V, VGS = 0V IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = VGS, ID = 1mA ΔVGS(th) ID = 1mA ΔTj referenced to 25℃ RDS(on)*5 VGS = 10V, ID = 6.
0A VGS = 4.
5V, ID = 6.
0A RG - |Yfs|*5 VDS = 5V, ID = 6.
0A *1 Tc = 25℃, Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L ...

Similar Datasheet

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)