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AONS66520

Alpha & Omega Semiconductors
Part Number AONS66520
Manufacturer Alpha & Omega Semiconductors
Description 150V N-Channel MOSFET
Published Sep 24, 2023
Detailed Description AONS66520 150V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • ...
Datasheet PDF File AONS66520 PDF File

AONS66520
AONS66520


Overview
AONS66520 150V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) Applications • Adaptors SR MOSFET 100% UIS Tested 100% Rg Tested 150V 100A < 9.
5mΩ < 12mΩ Top View DFN5x6 Bottom View Top View PIN1 S1 S2 S3 G4 8D 7D 6D 5D PIN1 Orderable Part Number AONS66520 Package Type DFN 5X6 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.
1mH C EAS Diode reverse recovery VDS=0 to 75V,IF<=10A,Tj=25°C dv/dt di/dt TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 150 ±20 100 64 400 17 13 50 125 30 500 215 86 6.
2 4 -55 to 150 Units V V A A A mJ V/ns A/us W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.
43 Max 20 50 0.
58 Units °C/W °C/W °C/W Rev.
1.
2: July 2020 www.
aosmd.
com Page 1 of 6 AONS66520 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 150 IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.
6 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.
5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuo...


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