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AONS66620

Alpha & Omega Semiconductors
Part Number AONS66620
Manufacturer Alpha & Omega Semiconductors
Description 60V N-Channel MOSFET
Published Sep 24, 2023
Detailed Description AONS66620 60V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • E...
Datasheet PDF File AONS66620 PDF File

AONS66620
AONS66620

Overview
AONS66620 60V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product(FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 60V 24A < 9mΩ < 11mΩ Applications • Synchronous Rectification in SMPS • ATX and Gaming Power Supplies • Switching Applications 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS66620 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.
3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 24 24 85 17.
5 14 20 60 36.
5 14.
5 5.
0 3.
2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 45 Maximum Junction-to-Case Steady-State RqJC 2.
8 Max 25 55 3.
4 Units °C/W °C/W °C/W Rev.
1.
0: August 2020 www.
aosmd.
com Page 1 of 6 AONS66620 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.
4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum B...


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