DatasheetsPDF.com

AOD66620

Alpha & Omega Semiconductors
Part Number AOD66620
Manufacturer Alpha & Omega Semiconductors
Description 60V N-Channel MOSFET
Published Sep 24, 2023
Detailed Description AOD66620 60V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Ex...
Datasheet PDF File AOD66620 PDF File

AOD66620
AOD66620

Overview
AOD66620 60V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product(FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 60V 58A < 8.
5mΩ < 11mΩ Applications • Synchronous Rectification in SMPS • ATX and Gaming Power Supplies • Switching Applications TopView TO-252 DPAK Bottom View 100% UIS Tested 100% Rg Tested D D D S G Orderable Part Number AOD66620 D G S Package Type TO-252 G S Form Tape & Reel Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.
3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 58 37 125 20 16 20 60 52 21 6.
2 4.
0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 1.
9 Max 20 50 2.
4 Units °C/W °C/W °C/W Rev.
1.
1: January 2024 www.
aosmd.
com Page 1 of 6 AOD66620 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.
4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAM...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)