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12A120K5

STMicroelectronics
Part Number 12A120K5
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Sep 28, 2023
Detailed Description STH12N120K5-2AG Datasheet Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H²PAK‑2 pack...
Datasheet PDF File 12A120K5 PDF File

12A120K5
12A120K5

Overview
STH12N120K5-2AG Datasheet Automotive-grade N-channel 1200 V, 1.
45 Ω typ.
, 7 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package TAB 23 1 H2PAK-2 D(TAB) Features Order code VDS RDS(on) max.
ID STH12N120K5-2AG 1200 V 1.
9 Ω 7A • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested G(1) S(2, 3) Applications • Switching applications DTG1S23NZ Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product status link STH12N120K5-2AG Product summary Order code STH12N120K5-2AG Marking 12A120K5 Package H²PAK-2 Packing Tape and reel DS14124 - Rev 1 - October 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com STH12N120K5-2AG Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current at TC = 25 °C ID Drain current at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness TJ Operating junction temperature range Tstg Storage temperature range 1.
Pulse width limited by safe operating area.
2.
ISD ≤ 7 A, di/dt ≤ 100 A/µs, VDS (peak) ≤ V(BR)DSS.
3.
VDS ≤ 960 V.
Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA (1) Thermal resistance, junction-to-ambient 1.
When mounted on FR-4 board of 1 inch², 2oz Cu.
Symbol IAR EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) Value ±30 7 4.
6 12 266 4.
5 50 -55 to ...


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