DatasheetsPDF.com

SPN4814A

SYNC POWER
Part Number SPN4814A
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Sep 28, 2023
Detailed Description SPN4814A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4814A is the N-Channel enhancement mode power field effec...
Datasheet PDF File SPN4814A PDF File

SPN4814A
SPN4814A

Overview
SPN4814A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4814A is the N-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control FEATURES  100V/20A,RDS(ON)=10.
5mΩ@VGS=10V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2022/02/11 Ver 1 PART MARKING Page 1 SPN4814A N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN4814AS8RGB SOP-8 ※ SPN4814AS8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TC=25℃ TC=100℃ Avalanche Energy, Single Pulse (L=0.
1mH , Tc=25℃) Power Dissipation TC=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient (steady state) Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJC RθJA Part Marking SPN4814A Typical 100 ±20 13 8 120 31 3.
1 -55/150 -55/150 0.
85 75 Unit V V A A mJ W ℃ ℃ ℃/W 2022/02/11 Ver 1 Page 2 SPN4814A N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Re...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)