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SPN230N06

SYNC POWER
Part Number SPN230N06
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Sep 30, 2023
Detailed Description SPN230N06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN230N06 is the N-Channel enhancement mode power field eff...
Datasheet PDF File SPN230N06 PDF File

SPN230N06
SPN230N06


Overview
SPN230N06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN230N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Power Tool  Motor Control FEATURES  60V/190A, RDS(ON)=3.
0mΩ@VGS=10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220 package design PIN CONFIGURATION TO-220 PART MARKING 2021/10/28 Ver 01 Page 1 SPN230N06 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN230N06T220TGB TO-220-3L ※ SPN230N06T220TGB : Tube ; Pb – Free ; Halogen - Free Part Marking SPN230N06 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(Silicon Limited) Pulsed Drain Current TC=25℃ TC=100℃ Avalanche Energy, Single Pulse @ L=0.
1mH, TC=25℃ Power Dissipation @ TC=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJc RθJA Typical 60 ±20 190 134 650 180 200 -55/175 -55/175 0.
75 50 Unit V V A A mJ W ℃ ℃ ℃/W ℃/W 2021/10/28 Ver 01 Page 2 SPN230N06 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min.
Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2.
0 Gate Leakage Current Zero Gate Voltage ...


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