DatasheetsPDF.com

9N60M6

STMicroelectronics
Part Number 9N60M6
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Oct 1, 2023
Detailed Description STD9N60M6 Datasheet N‑channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G...
Datasheet PDF File 9N60M6 PDF File

9N60M6
9N60M6

Overview
STD9N60M6 Datasheet N‑channel 600 V 670 mΩ typ.
, 6 A MDmesh M6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max.
ID STD9N60M6 600 V 750 mΩ 6A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters • Boost PFC converters Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.
STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Product status link STD9N60M6 Product summary Order code STD9N60M6 Marking 9N60M6 Package DPAK Packing Tape and reel DS13558 - Rev 1 - November 2020 For further information contact your local STMicroelectronics sales office.
www.
st.
com 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tj Operating junction temperature range Tstg Storage temperature range 1.
Pulse width limited by package.
2.
ISD ≤ 6 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS.
3.
VDS ≤ 480 V.
Table 2.
Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-pcb (1) Thermal resistance junction-pcb 1.
When mounted on an 1 inch² FR-4, 2 Oz copper board.
Symbol IAR EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or non-repetitive ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)