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IXGJ50N60C4D1

IXYS
Part Number IXGJ50N60C4D1
Manufacturer IXYS
Description High-Gain IGBT
Published Oct 1, 2023
Detailed Description High-Gain IGBT w/ Diode (Electrically Isolated Tab) Preliminary Technical Information IXGJ50N60C4D1 VCES = IC110 = V ...
Datasheet PDF File IXGJ50N60C4D1 PDF File

IXGJ50N60C4D1
IXGJ50N60C4D1

Overview
High-Gain IGBT w/ Diode (Electrically Isolated Tab) Preliminary Technical Information IXGJ50N60C4D1 VCES = IC110 = V ≤ CE(sat) 600V 21A 2.
50V High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60 Hz, RM, t = 1min Maximum Ratings 600 V 600 V ±20 V ±30 V 52 A 21 A 12 A 220 A ICM = 72 A ≤ VCE VCE...


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