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4N135-P

UTC
Part Number 4N135-P
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Oct 21, 2023
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 4N135-P Advance 4.0A, 1350V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N135-P is a...
Datasheet PDF File 4N135-P PDF File

4N135-P
4N135-P


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 4N135-P Advance 4.
0A, 1350V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N135-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
 FEATURES * RDS(ON) ≤ 6.
0 Ω @ VGS=10V, ID=2.
0A * High Switching Speed  SYMBOL 2.
Drain Power MOSFET 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N135L-T47-T 4N135G-T47-T TO-247 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S Packing Tube  MARKING www.
unisonic.
com.
tw Copyright © 2021 Unisonic Technologies Co.
, Ltd 1 of 5 QW-R205-839.
b 4N135-P Advance Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1350 V Gate-Source Voltage Drain Current Power Dissipation Continuous Pulsed (Note 2) VGSS ID IDM PD ± 30 V 4 A 8 A 155 W Junction Temperature Storage Temperature TJ TSTG +150 °C -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
 THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATING 50 0.
8  ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified) UNIT °C/W °C/W PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistanc...


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