* RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance
SYMBOL
3.Drain
Power MOS...