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ISC320N12LM6

Infineon
Part Number ISC320N12LM6
Manufacturer Infineon
Description MOSFET
Published Dec 11, 2023
Detailed Description ISC320N12LM6 MOSFET OptiMOSTM6Power-Transistor,120V Features •N-channel,logiclevel •Verylowon-resistanceRDS(...
Datasheet PDF File ISC320N12LM6 PDF File

ISC320N12LM6
ISC320N12LM6

Overview
ISC320N12LM6 MOSFET OptiMOSTM6Power-Transistor,120V Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 120 V RDS(on),max 32 mΩ ID 24 A Qoss 13 nC QG(0V.
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4.
5V) 4.
1 nC Qrr(1000A/µs) 20.
3 nC SuperSO8 8 7 65 56 78 1 23 4 4321 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode ISC320N12LM6 Package PG-TDSON-8 Marking 320N12L6 RelatedLinks - Final Data Sheet 1 Rev.
2.
0,2023-10-11 OptiMOSTM6Power-Transistor,120V ISC320N12LM6 TableofContents Description .
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1 Maximum ratings .
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3 Thermal characteristics .
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3 Electrical characteristics .
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4 Electrical characteristics diagrams .
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6 Package Outlines .
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