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FDMC610P

ON Semiconductor
Part Number FDMC610P
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Dec 19, 2023
Detailed Description MOSFET – P-Channel, POWERTRENCH) -12 V, -80 A, 3.9 mW FDMC610P General Description This P−Channel MOSFET has been desig...
Datasheet PDF File FDMC610P PDF File

FDMC610P
FDMC610P


Overview
MOSFET – P-Channel, POWERTRENCH) -12 V, -80 A, 3.
9 mW FDMC610P General Description This P−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features • Max rDS(on) = 3.
9 mW at VGS = −4.
5 V, ID = −22 A • Max rDS(on) = 6.
4 mW at VGS = −2.
5 V, ID = −16 A • State−of−the−art Switching Performance • Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Efficiency • Shielded Gate Technology Reduces Switch Node Ringin...



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