• Extended TJ Rating to 175°C • Shielded Gate MOSFET Technology • Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A • Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A • High Performance Technology for Extremely Low rDS(on) • Termination is Lead−free and RoHS Com...
FDMC86160ET100 PDF File
