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FDMC86244-L701

ON Semiconductor
Part Number FDMC86244-L701
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 19, 2023
Detailed Description MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 9.4 A, 134 mW FDMC86244, FDMC86244-L701 General Description This...
Datasheet PDF File FDMC86244-L701 PDF File

FDMC86244-L701
FDMC86244-L701


Overview
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 9.
4 A, 134 mW FDMC86244, FDMC86244-L701 General Description This N−Channel MOSFET is produced using ON Semiconductor‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.
This process has been optimized for the on−state resistance and yet maintain superior switching performance.
Features • Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.
8 A • Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.
4 A • Low Profile − 1 mm Max in Power 33 • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC − DC Conversion www.
onsemi.
com 8 765 SSSG 1234 DDDD Top Bottom WDFN8 3.
3x3.
3, 0.
65P CASE 511DR FDMC86244 SS SG DDDD Top Bottom WDFN8 3.
3x3.
3, 0.
65P CASE 511DQ FDMC86244−L701 MARKING DIAGRAM ON AXYKK FDMC 86244 FDMC 86244 ALYW FDMC86244 FDMC86244−L701 FDMC86244 A XY KK L YW = Specific Device Code = Assembly Site = 2−Digit Date Code = 2−Digit Lot Run Traceability Code = Wafer Lot Number = Assembly Start Week PIN ASSIGNMENT S1 S2 S3 G4 8D 7D 6D 5D © Semiconductor Components Industries, LLC, 2012 March, 2021 − Rev.
3 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet.
1 Publication Order Number: FDMC86244/D FDMC86244, FDMC86244−L701 MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current Continuous Continuous (Note 2a) Pulsed TC = 25°C TA = 25°C 150 V ±20 V 9.
4 A 2.
8 12 EAS Single Pulse Avalanche Energy (Note 1) 12 mJ PD Power Dissipation TC = 25°C 26 W Power Dissipation (Note 2a) TA = 25°C 2.
3 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Sta...



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