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FDMF3030

ON Semiconductor
Part Number FDMF3030
Manufacturer ON Semiconductor
Description DrMOS
Published Dec 20, 2023
Detailed Description DATA SHEET www.onsemi.com Extra-Small, High-Performance, High-Frequency, DrMOS Module PQFN40 6x6, 0.5P CASE 483AN FDM...
Datasheet PDF File FDMF3030 PDF File

FDMF3030
FDMF3030

Overview
DATA SHEET www.
onsemi.
com Extra-Small, High-Performance, High-Frequency, DrMOS Module PQFN40 6x6, 0.
5P CASE 483AN FDMF3030 Description The DrMOS family is onsemi’s next−generation, fully optimized, ultra−compact, integrated MOSFET−plus−driver, power−stage solution for high−current, high−frequency, synchronous buck, DC−DC applications.
The FDMF3030 integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra−compact, 6x6 mm package.
With an integrated approach, the complete switching power stage is optimized with regard to driver and MOSFET dynamic performance, system inductance, and power MOSFET RDS(ON).
The FDMF3030 uses onsemi’s high−performance POWERTRENCH® MOSFET technology, which dramatically reduces switch ringing, eliminating the need for a snubber circuit in most buck converter applications.
A driver IC with reduced dead times and propagation delays further enhances performance.
A thermal warning function indicates a potential over−temperature situation.
The FDMF3030 also incorporates a Zero−Cross Detect (ZCD_EN# pin) for improved light−load efficiency and provides a 3−state 5 V PWM input for compatibility with a wide range of PWM controllers.
Features • Over 93% Peak−Efficiency • High−Current Handling: 50 A • High−Performance PQFN Copper−Clip Package • 3−State 5 V PWM Input Driver • Automatic Diode Emulation (Skip Mode) Enabled through ZCD_EN# Input • Thermal Warning Flag for Over−Temperature Condition • Driver Output Disable Function (DISB# Pin) • Internal Pull−Up and Pull−Down for ZCD_EN# and DISB# Inputs, Respectively • onsemi POWERTRENCH Technology MOSFETs for Clean Voltage Waveforms and Reduced Ringing • onsemi SyncFETt Technology (Integrated Schottky Diode) in Low−Side MOSFET • Integrated Bootstrap Schottky Diode • Adaptive Gate−Drive Timing for Shoot−Through Protection • Under−Voltage Lockout (UVLO) • Optimized for Switching Frequencies up to 1 MHz • Low−Profile SMD Package • Based on the Intel® 4.
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