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FDMF6821B

ON Semiconductor
Part Number FDMF6821B
Manufacturer ON Semiconductor
Description High-Frequency DrMOS
Published Dec 20, 2023
Detailed Description Extra-Small, High-Performance, High-Frequency DrMOS Module FDMF6821B Description The XS™ DrMOS family is ON Semiconduct...
Datasheet PDF File FDMF6821B PDF File

FDMF6821B
FDMF6821B


Overview
Extra-Small, High-Performance, High-Frequency DrMOS Module FDMF6821B Description The XS™ DrMOS family is ON Semiconductor’s next−generation, fully optimized, ultra−compact, integrated MOSFET plus driver power stage solution for high−current, high− frequency, synchronous buck DC−DC applications.
The FDMF6821B integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra−compact 6x6 mm package.
With an integrated approach, the complete switching power stage is optimized with regard to driver and MOSFET dynamic performance, system inductance, and power MOSFET RDS(ON).
XS DrMOS uses ON Semiconductor’s high−performance POWERTRENCH® MOSFET technology, which dramatically reduces switch ringing, eliminating the need for snubber circuit in most buck converter applications.
A driver IC with reduced dead times and propagation delays further enhances the performance.
A thermal warning function warns of a potential over−temperature situation.
The FDMF6821B also incorporates a Skip Mode (SMOD#) for improved light−load efficiency.
The FDMF6821B also provides a 3−state 3.
3 V PWM input for compatibility with a wide range of PWM controllers.
Features • Over 93% Peak−Efficiency • High−Current Handling: 55 A • High−Performance PQFN Copper−Clip Package • 3−State 3.
3 V PWM Input Driver • Skip−Mode SMOD# (Low−Side Gate Turn Off) Input • Thermal Warning Flag for Over−Temperature Condition • Driver Output Disable Function (DISB# Pin) • Internal Pull−Up and Pull−Down for SMOD# and DISB# Inputs, Respectively • ON Semiconductor PowerTrench Technology MOSFETs for Clean Voltage Waveforms and Reduced Ringing • ON Semiconductor SyncFET (Integrated Schottky Diode) Technology in Low−Side MOSFET • Integrated Bootstrap Schottky Diode • Adaptive Gate Drive Timing for Shoot−Through Protection • Under−Voltage Lockout (UVLO) • Optimized for Switching Frequencies up to 1 MHz • Low−Profile SMD Package • Based on the Intel® 4.
0 DrMOS Standard • This Device is Pb−...



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