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FDMS86263P

ON Semiconductor
Part Number FDMS86263P
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Dec 20, 2023
Detailed Description MOSFET – P-Channel, POWERTRENCH) -150 V, -22 A, 53 mW FDMS86263P General Description This P−Channel MOSFET is produced u...
Datasheet PDF File FDMS86263P PDF File

FDMS86263P
FDMS86263P

Overview
MOSFET – P-Channel, POWERTRENCH) -150 V, -22 A, 53 mW FDMS86263P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology.
This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
Features • Max rDS(on) = 53 mW at VGS = −10 V, ID = −4.
4 A • Max rDS(on) = 64 mW at VGS = −6 V, ID = −4 A • Very Low Rds−on in Mid−Voltage P−Channel Silicon Technology Optimized for Low Qg • This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications • 100% Uil Tested • This Device is Pb−Free and is RoHS Compliant Applications • Active Clamp Switch • Load Switc...


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