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FDFS6N548

ON Semiconductor
Part Number FDFS6N548
Manufacturer ON Semiconductor
Description N-Channel MOSFET and Schottky Diode
Published Dec 24, 2023
Detailed Description FDFS6N548 Integrated N-Channel POWERTRENCH® MOSFET and Schottky Diode Description The FDFS6N548 combines the exceptiona...
Datasheet PDF File FDFS6N548 PDF File

FDFS6N548
FDFS6N548

Overview
FDFS6N548 Integrated N-Channel POWERTRENCH® MOSFET and Schottky Diode Description The FDFS6N548 combines the exceptional performance of ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO−8 package.
This device is designed specifically as a single package solution for DC to DC converters.
It features a fast switching, low gate charge MOSFET with very low on−state resistance.
The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Features • Max rDS(on) = 23 mW at VGS = 10 V, ID = 7 A • Max rDS(on) = 30 mW at VGS = 4.
5 V, ID = 6 A • VF < 0.
45 V @ 2 A VF < 0.
28 V @ 100 mA • Schottky and MOSFET Incorporated into Single Power Surface Mount SO−8 Package • Electrically Independent Schottky and MOSFET Pinout for Design Flexibility • Low Miller Charge Application • DC/DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain−to−Source Voltage 30 V VGS Gate−to−Source Voltage ±20 V ID Drain Current Continuous (Note 1a) 7 A Pulsed 30 PD Power Dissipation Dual Operation 2 W Single Operation (Note 1a) 1.
6 EAS VRRM IO TJ, TSTG Drain−Source Avalanche Energy (Note 3) Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) Operating and Storage Junction Temperature Range 12 mJ 30 V 2 A −55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJA Thermal Resistance, 78 Junction−to−Ambient (Note 1a) _C/W RqJC Thermal Resistance, Junction−to−Case (Note 1) 40 _C/W www.
onsemi.
com D D C C Pin 1 G S A A SOIC8 CASE 751EB A1 A2 S3 G4 8C 7C 6D 5D ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this ...


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