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FDG1024NZ

ON Semiconductor
Part Number FDG1024NZ
Manufacturer ON Semiconductor
Description Dual N-Channel MOSFET
Published Dec 24, 2023
Detailed Description MOSFET – Dual N-Channel, POWERTRENCH® 20 V, 1.2 A, 175 mW FDG1024NZ Description This dual N−Channel logic level enhancem...
Datasheet PDF File FDG1024NZ PDF File

FDG1024NZ
FDG1024NZ

Overview
MOSFET – Dual N-Channel, POWERTRENCH® 20 V, 1.
2 A, 175 mW FDG1024NZ Description This dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on−state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features • Max rDS(on) = 175 mW at VGS = 4.
5 V, ID = 1.
2 A • Max rDS(on) = 215 mW at VGS...


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