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FDPC8016S

ON Semiconductor
Part Number FDPC8016S
Manufacturer ON Semiconductor
Description Dual N-Channel MOSFET
Published Dec 25, 2023
Detailed Description MOSFET - Dual N‐Channel, Asymmetric, POWERTRENCH) Power Clip 25 V FDPC8016S General Description This device includes tw...
Datasheet PDF File FDPC8016S PDF File

FDPC8016S
FDPC8016S


Overview
MOSFET - Dual N‐Channel, Asymmetric, POWERTRENCH) Power Clip 25 V FDPC8016S General Description This device includes two specialized N−Channel MOSFETs in a dual package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
Features Q1: N-Channel • Max RDS(on) = 3.
8 mW at VGS = 10 V, ID = 20 A • Max RDS(on) = 4.
7 mW at VGS = 4.
5 V, ID = 18 A Q2: N-Channel • Max RDS(on) = 1.
4 mW at VGS = 10 V, ID = 35 A • Max RDS(on) = 1.
7 mW at VGS = 4.
5 V, ID = 32 A • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing • These Devices are Pb−Free and are RoHS Compliant Applications • Computing • Communications • General Purpose Point of Load www.
onsemi.
com ELECTRICAL CONNECTION N-Channel MOSFET PIN1 Top View Bottom View Power Clip 56 (PQFN8 5x6) CASE 483AR PIN ASSIGNMENT HSG GR V+ V+ * GND(LSS) PAD9 LSG SW SW SW *PAD10 V+(HSD) MARKING DIAGRAM $Y&Z&3&K 05OD 15OD $Y &Z &3 &K 05OD 15OD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016 1 November, 2019 − Rev.
6 Publication Order Number: FDPC8016S/D FDPC8016S PINOUT DESCRIPTION Pin Name Description 1 HSG High Side Gate 2 GR Gate Return Pin 3.
4, 10 5, 6, 7 Name V+(HSD) SW Description High Side Drain Switching Node, Low Side Drain Pin Name Description 8 LSG Low Side Gate 9 GND(LSS) Low Side Source MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified) Symbol Parameter Q1 Q2 Unit VDS Drain to Source Voltage 25 (Note 5) 25 (Note 5) V VGS Gate to Source Voltage ±12 ±12 V ID D...


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