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FDS2572

ON Semiconductor
Part Number FDS2572
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description MOSFET – N-Channel, UltraFET TRENCH 150 V, 0.047 mW 4.9 A FDS2572 Description UltraFET Devices Combine Characteristics t...
Datasheet PDF File FDS2572 PDF File

FDS2572
FDS2572

Overview
MOSFET – N-Channel, UltraFET TRENCH 150 V, 0.
047 mW 4.
9 A FDS2572 Description UltraFET Devices Combine Characteristics that enable benchmark efficiency in power conversion applications.
Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC−DC converters.
Features • RDS(on) = 0.
040 mW (Typ.
), VGS = 10 V • Qg(TOT) = 29 nC (Typ.
), VGS = 10 V • Low QRR Body Diode • Maximized Efficiency at High Frequencies • UIS Rated • These Device is Pb−Free and Halide Free Typical Applications • DC−DC Converters • Telecom and Data−Com Distributed Power Architectures • 48−volt I/P Half−Bridge/Full−Bridge • 24−volt Forward and Push−Pull topologies DATA SHEET www.
onsemi.
com DD DD D DD Pin 1 SO−8 SS SS SS GG SOIC8 CASE 751EB 5 4 6 3 7 2 8 1 MARKING DIAGRAM &Z&2&K FDS2572 &Z = Assembly Plant Code &3 = Date Code (Year & Week) &K = Lot Traceability Code FDS2572 = Specific Device Code ORDERING INFORMATION Device FDS2572 Package SOIC8 (Pb−Free,Halide Free) Shipping† 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016 1 November, 2023 − Rev 1 Publication Order Number: FDS2572/D FDS2572 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (TC = 25°C, VGS = 10 V, RqJA = 50°C/W) − Continuous (TC = 100°C, VGS = 10 V, RqJA = 50°C/W) − Pulsed 150 V ±20 V A 4.
9 3.
1 Figure 4 PD Power Dissipation TC = 25°C Derate Above 25°C 2.
5 W 20 mW/°C TJ, Tstg Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur...


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