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FDS6676AS-G

ON Semiconductor
Part Number FDS6676AS-G
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description SyncFETt – N-Channel, POWERTRENCH) 30 V FDS6676AS, FDS6676AS-G General Description The FDS6676AS is designed to replace ...
Datasheet PDF File FDS6676AS-G PDF File

FDS6676AS-G
FDS6676AS-G

Overview
SyncFETt – N-Channel, POWERTRENCH) 30 V FDS6676AS, FDS6676AS-G General Description The FDS6676AS is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies.
This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
The FDS6676AS includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.
Features • 14.
5 A, 30 V ♦ RDS(ON) Max = 6.
0 mW at VGS = 10 V ♦ RDS(ON) Max = 7.
25 mW at VGS = 4.
5 V • Includes SyncFET Schottky Body Diode • Low Gate Charge (45 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching • High Power and Current Handling C...


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