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FDT86102LZ

ON Semiconductor
Part Number FDT86102LZ
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 100 V, 6.6 A, 28 mW FDT86102LZ General Description This N−C...
Datasheet PDF File FDT86102LZ PDF File

FDT86102LZ
FDT86102LZ

Overview
DATA SHEET www.
onsemi.
com MOSFET – N-Channel, POWERTRENCH) 100 V, 6.
6 A, 28 mW FDT86102LZ General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and switching loss.
G−S zener has been added to enhance ESD voltage level.
Features • Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.
6 A • Max rDS(on) = 38 mW at VGS = 4.
5 V, ID = 5.
5 A • HBM ESD Protection Level > 6 kV Typical (Note 4) • Very Low Qg and Qgd Compared to Competing Trench Technologies • Fast Switching Speed • 100% UIL Tested • This Device is Pb−Free, Halide Free and RoHS Compliant Applications • DC − DC Conversion • Inverter...


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