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2SA2206

Part Number	2SA2206
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Dec 30, 2023
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Power Switching Applications 2SA2206...
Datasheet	2SA2206 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Power Switching Applications 2SA2206 Unit: mm Low collector emitter saturation voltage : VCE (sat) = -0.
5 V (max) (IC = -1A) High-speed switching: tstg = 300 ns (typ.
) Complementary to 2SC6124 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range DC Pulse t = 10 s DC VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg -80 V -80 V -7 V -2 A -4 A -0.
5 A 2.
5 W 1 150 °C −55 to 150 °C 1: BASE 2...

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