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TK200F04N1L

Toshiba
Part Number TK200F04N1L
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 2, 2024
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK200F04N1L 1. Applications • Automotive • Switching Voltage Regulators • DC-DC...
Datasheet PDF File TK200F04N1L PDF File

TK200F04N1L
TK200F04N1L

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK200F04N1L 1.
Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.
78 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.
0 to 3.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK200F04N1L TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-08 2020-06-24 Rev.
8.
0 TK200F04N1L 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteri...


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