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TK9Q65W

Toshiba
Part Number TK9Q65W
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Jan 3, 2024
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK9Q65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK9Q65W PDF File

TK9Q65W
TK9Q65W

Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK9Q65W 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
46 Ω(typ.
) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.
5 to 3.
5 V(VDS = 10 V, ID = 0.
35 mA) 3.
Packaging and Internal Circuit TK9Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 9.
3 A Drain current (pulsed) (Note 1) IDP 37.
2 Power dissipation (Tc = 25 ) P...


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