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MX6018

ChipSourceTek
Part Number MX6018
Manufacturer ChipSourceTek
Description N-Channel Power MOSFET
Published Jan 7, 2024
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The MX6018 uses advanced trench technology and design to provide exc...
Datasheet PDF File MX6018 PDF File

MX6018
MX6018

Overview
N-Channel Enhancement Mode Power MOSFET Description The MX6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
MX6018 s G General Features Schematic diagram  VDS =60V，ID =18A  RDS(ON)(Typ.
)10mΩ @ Vgs=10V  RDS(ON)(Typ.
)13.
5mΩ @ Vgs=4.
5V High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Special process technology for high ESD capability k Good stability and uniformity with high EAS Excellent package for good heat dissipation e Application T Power switching application Hard Switched and High Frequency Circuits rce Uninterruptible Power Supply 6018 Marking and pin assignment ipSou Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Ch Drain-Source Voltage Parameter Symbol VDS Limit Unit 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 18 A Drain Current-Continuous(TC=100℃) ID (100℃) 12 A Pulsed Drain Current IDM 35 A Maximum Power Dissipation PD 2.
5 W TEL: +86-0755-27595155 27595165 page 1 FAX: +86-0755-27594792 WEB:Http://www.
ChipSourceTek.
com E-mail: Tony.
Wang@.
ChipSourceTek.
com InFo@ChipSourceTek.
com MX6018 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current On Characteristics (Note 3) IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.
2 2.
0 2.
5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=18A VGS=4.
5V, ID=10A - 10 14 mΩ - 13.
5 18 mΩ Forward Transconductance gFS VDS=10V,ID=10A 20 - - S Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance k Switching Characteristics (Note 4) e Turn-on Delay Time Turn-on Rise Time...


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