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MX8205

ChipSourceTek
Part Number MX8205
Manufacturer ChipSourceTek
Description Dual N-Channel Power MOSFET
Published Jan 7, 2024
Detailed Description Dual N-Channel Enhancement Mode Power MOSFET MX8205 MX8205 DESCRIPTION The MX8205 uses advanced trench technology to pro...
Datasheet PDF File MX8205 PDF File

MX8205
MX8205

Overview
Dual N-Channel Enhancement Mode Power MOSFET MX8205 MX8205 DESCRIPTION The MX8205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
It can be used in a wide variety of applications.
MX8205 GENERAL FEATURES MX8205 APPLICATION  VDS=20V, ID=6A  Battery protection RDS(ON)(Typ.
)=20mΩ @ VGS=4.
5V  Load switch RDS(ON)(Typ.
)=21mΩ @ VGS=3.
8V RDS(ON)(Typ.
)=26mΩ @ VGS=2.
5V  High Power and current handing cpability  Lead free product is acquired k  Surface Mount Package e MX8205 PINOUT ceT Schematic diagram Marking and Pin Assignment SOT23-6 top view r MX8205 ORDERING INFORMATION u Part Number MX8205 StorageTemperature -55°C to 150°C Package SOT23-6 Devices Per Reel 3000 o MX8205 ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise noted) S Parameter Drain-Source Voltage p Gate-Source Voltage Drain Current-Continuous h Drain Current-Pulsed (Note1) Maximum Power Dissipation C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ, TSTG Limit 20 ±12 6 24 1.
5 -55 to 150 Unit V V A A W °C MX8205 ERMAL RESISTANCE Thermal Resistance, Junction-to-Ambient(Note2) RθJA 83 ºC/W Note 1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 -1- WEB:Http://www.
ChipSourceTek.
com E-mail: Sales@ChipSourceTek.
com InFo@ChipSourceTek.
com Rev1.
2.
2 Dual N-Channel Enhancement Mode Power MOSFET MX8205 MX8205 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V, VDS=0V - - ±100 nA On Characteristics(Note 3) Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 0.
45 0.
7 1.
2 V VGS=4.
5V, ID=4.
5A 18 20 24 mΩ k Drain-Source On-State R...


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