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NP20N10YDF

Renesas
Part Number NP20N10YDF
Manufacturer Renesas
Description N-Channel MOSFET
Published Jan 13, 2024
Detailed Description Preliminary Data Sheet NP20N10YDF MOS FIELD EFFECT TRANSISTOR R07DS0705EJ0100 Rev.1.00 Apr 17, 2012 Description The N...
Datasheet PDF File NP20N10YDF PDF File

NP20N10YDF
NP20N10YDF

Overview
Preliminary Data Sheet NP20N10YDF MOS FIELD EFFECT TRANSISTOR R07DS0705EJ0100 Rev.
1.
00 Apr 17, 2012 Description The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features  Low on-state resistance RDS(on) = 55 m MAX.
(VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX.
(VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX.
(VGS = 4.
5 V, ID = 10 A)  Low Ciss: Ciss = 1000 pF TYP.
(VDS = 25 V, VGS = 0 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
NP20N10YDF-E1-AY *1 NP20N10YDF-E2-AY *1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package 8-pin HSON Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) *2 Channel Temperature Storage Temperature Single Avalanche Current *3 Single Avalanche Energy *3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 100 20 20 40 61 1.
0 175 –55 to +175 16 26 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C) Channel to Ambient Thermal Resistance *2 Rth(ch-A) 2.
46 °C/W 150 °C/W Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 Mounted on glass epoxy substrate of 40 mm  40 mm  1.
6 mmt with 4% copper area (35 m) *3 Tch(start) = 25°C, VDD = 50 V, RG = 25 , L = 100 H, VGS = 20 V  0 V Caution: This product is an electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge.
HBM (C = 100 pF, R = 1.
5 k) 700 V.
R07DS0705EJ0100 Rev.
1.
00 Apr 17, 2012 Page 1 of 6 NP20N10YDF Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Th...


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