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NP36P04KDG

Renesas
Part Number NP36P04KDG
Manufacturer Renesas
Description P-channel Power MOSFET
Published Jan 14, 2024
Detailed Description NP36P04KDG -40V – -36A – P-channel Power MOS FET Application : Automotive Datasheet R07DS1523EJ0100 Rev.1.00 Jun. 24, 2...
Datasheet PDF File NP36P04KDG PDF File

NP36P04KDG
NP36P04KDG

Overview
NP36P04KDG -40V – -36A – P-channel Power MOS FET Application : Automotive Datasheet R07DS1523EJ0100 Rev.
1.
00 Jun.
24, 2022 Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features  Super low on-state resistance : RDS(on) = 17.
0 m Max.
( VGS = -10 V, ID = -18 A ) RDS(on) = 23.
5 m Max.
( VGS = -4.
5 V, ID = -18 A )  Low input capacitance : Ciss = 2800 pF Typ.
 Designed for automotive application and AEC-Q101 qualified.
 Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 123 1.
Gate 2.
Drain 3.
Source 4.
Drain(Fin) MP-25ZK (TO-263) Absolute Maximum Ratings Gate Source Equivalent c...


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