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Si2356DS Datasheet PDF


Part Number Si2356DS
Manufacturer Vishay
Title N-Channel MOSFET
Description N-Channel 40 V (D-S) MOSFET Si2356DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.051 at VGS = 10 V 40 0.054 at VGS = 4.5 V ...
Features
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• DC/DC Converter
• Load Switch
• LED Backlighting
• Power Management D G Top View Si2356DS (E9)* * Marking Code Ordering Information: Si2356DS-T1-...

File Size 195.23KB
Datasheet Si2356DS PDF File








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Si2351DS : P-Channel 20-V (D-S) MOSFET Si2351DS Vishay Siliconix MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 3.0 - 20 0.205 at VGS = - 2.5 V - 2.2 Qg (Typ.) 3.2 nC FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested RoHS COMPLIANT TO-236 (SOT-23) G1 S2 3D Top View Si2351DS (G1)* * Marking Code Ordering Information: Si2351DS-T1-E3 (Lead (Pb)-free) Si2351DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Cu.




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