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TN0106

Microchip
Part Number TN0106
Manufacturer Microchip
Description N-Channel Vertical DMOS FET
Published Jan 22, 2024
Detailed Description TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • 50 pF...
Datasheet PDF File TN0106 PDF File

TN0106
TN0106

Overview
TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • 50 pF Typical Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TN0106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Package Type 3-lead TO-92 (Top view) See Table 3-1 for pin information.
SOURCE DRAIN GATE  2020 Microchip Technology Inc.
DS20005932A-page 1 TN0106 1.
0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Drain-to-Source Voltage .
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BVDSS Drain-to-Gate Voltage .
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BVDGS Gate-to-Source Voltage .
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±20V Operating Ambient Temperature, TA .
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