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GT30J110SRA

Toshiba
Part Number GT30J110SRA
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Jan 30, 2024
Detailed Description Discrete IGBTs Silicon N-Channel IGBT GT30J110SRA GT30J110SRA 1. Applications • Dedicated to Voltage-Resonant Inverter...
Datasheet PDF File GT30J110SRA PDF File

GT30J110SRA
GT30J110SRA

Overview
Discrete IGBTs Silicon N-Channel IGBT GT30J110SRA GT30J110SRA 1.
Applications • Dedicated to Voltage-Resonant Inverter Switching Applications • Dedicated to Soft Switching Applications • Dedicated to Induction Cooktops and Home Appliance Applications Note: The product(s) described herein should not be used for any other application.
2.
Features (1) 6.
5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip.
(3) Enhancement mode (4) High-speed switching: IGBT tf = 0.
17 µs (typ.
) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.
60 V (typ.
) (IC = 30 A, Ta = 25 �) (6) High junction temperature: Tj = 175 � (max) 3.
Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector (Heatsink) 3: Emitter ©2020-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-12 2021-02-24 Rev.
3.
0 GT30J110SRA 4.
Absolute Maximum Ratings (Note) (Ta = 25 �, unless otherwise specified) Characteristics Symbol...


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